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BSC010NE2LS

Name: BSC010NE2LS
Brand: Infineon

Transistor, MOSFET, N-channel, 25V, 39A, 1.0 mOhm, 242A, 33 nC, TSDSON8 | Infineon BSC010NE2LS

Availability: Out of Stock

Package Type: POWERTDFN-8

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Specifications for the BSC010NE2LS

Part Name	BSC010NE2LS
Manufacturer	Infineon Technologies
Category	Electronic Components
RoHS	True
Life Cycle Status	Not Recommended for New Designs
Formats Available for Symbols and Footprints	Altium, Eagle, KiCAD, Cadence OrCad/Allegro, PADS, DxDesigner, PCB123, Pulsonix, Proteus
Datasheet	See Datasheet PDF
Pin Count	8
Maximum Drain Source Voltage (V)	25 V
Maximum Continuous Drain Current (A)	100 A
Mounting Type	Surface Mount
Maximum Gate Source Voltage (V)	-20 V, +20 V
Series	OptiMOS™
Maximum Power Dissipation	96 W
Channel Mode	Enhancement
Height	1.1 (mm)
Typical Gate Charge Vgs	31 nC @ 10 V
Width	5.35 (mm)
Length	6.1 (mm)
Package Type	TDSON
Number Of Elements Per Chip	1
Minimum Operating Temperature	-55 °C
Transistor Material	Si
Forward Diode Voltage (V)	1 (V)
Channel Type	N
Maximum Operating Temperature	+150 °C
Maximum Drain Source Resistance	1.3 mΩ
Transistor Configuration	Single

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